Method of manufacturing semiconductor sample

专利摘要:
PURPOSE: A method for manufacturing a sample of a semiconductor device is provided to easily observe the section of the sample with a polyimide. CONSTITUTION: A polyimide layer is formed on a substrate(S100). The polyimide layer is rapidly cooled by dipping a liquid nitrogen the resultant structure(S110). Cracks are generated in the substrate(S120). By cutting the resultant structure to vertical direction, a sample is then formed(S130).
公开号:KR20040021278A
申请号:KR1020020052883
申请日:2002-09-03
公开日:2004-03-10
发明作者:김부득；윤상웅；이창호；이시용；김영훈；류진아；유재은
申请人:삼성전자주식회사；
IPC主号:

专利说明:

Specimen Fabrication Method of Semiconductor Device {METHOD OF MANUFACTURING SEMICONDUCTOR SAMPLE}
[4] The present invention relates to a method for fabricating a specimen of a semiconductor device, and more particularly, to a method for fabricating a specimen of a semiconductor device for observing a cross section.
[5] The semiconductor device manufacturing process includes forming a passivation layer for protecting the circuit after forming all the circuits for implementing the chip. In general, polyimide (heat resistant and excellent insulation ability) is used in the protective film process of the semiconductor process.
[6] Polyimide is a polymer produced by condensation reaction between diamines and dianhydrides. Aromatic polyimide is usually not melted or melted, so precipitation occurs in the middle of the polymerization.
[7] In order to solve the above problem, condensation is typically performed in two steps. The first step is to produce linear polymers at a suitable temperature below 70 ° C., and the second step is to completely polyimide by heating to a temperature above 300 ° C. and cyclizing in the state of polyamic acid. As described above, the polyimide is produced using diamines having flexible linking units, and thus has flexibility. Therefore, it is used for high temperature industrial machinery parts or high temperature resistant laminations, and in the semiconductor process is coated with a protective film material for protecting the circuit of the chip.
[8] However, the photoresist used in the general photolithography process of the semiconductor process is a low viscosity material of 6 to 35 cP at room temperature, whereas the polyimide is a high viscosity material of 14000 cP, so a conventional coating like the photoresist In this way, the film cannot be formed, but in the form of mucus.
[9] An open region is formed on the pad and the fuse where the pad and the fuse are formed by the conventional photolithography process on the polyimide film, and the formation state is verified. In the current technique, the examination is conducted in a plan view by a microscope.
[10] In general, when the polyimide is thickly applied, the polyimide has a yellow color, so that the coated state can be determined as a color. However, when the polyimide remains thin at the bottom of the open area, yellow is not clear and it is impossible to distinguish the color by color. For the above reason, if the open area is not properly formed, the pad will not be opened later, and a poor contact will occur. If the fuse is not opened, the device will not be repaired.
[11] In this way, whether the film remains on the bottom can be observed in a vertical cross section. Currently, the vertical analysis is performed through a series of processes to observe the defects and their characteristics by observing the shape of the film formed on the substrate using a SEM (Scanning Electron Microscope) equipment after coating, vertically cut the substrate Is done. Korean Patent Laid-Open Publication No. 1999-0041915 discloses a method for producing a specimen.
[12] However, polyimide is highly viscous in an unstable dry state and flexible even when completely dried, so that the cross-section is broken by cross-section cutting, which is not only possible to cut the cross-section by a conventional method, but also takes a long time to form a polyimide film. It is impossible to evaluate the conditions of the photographic process.
[13] In other words, the cross-sectional inspection of the open state of the protective film not only takes a long time, but it is difficult to accurately observe, and accordingly, a defect occurs and a lot of loss occurs in the process progress.
[14] Accordingly, an object of the present invention is to provide a method for fabricating a specimen of a semiconductor device for observing a cross section of a device formed of polyimide.
[1] 1 is a block diagram of a specimen manufacturing method according to Example 1 of the present invention.
[2] 2 is a block diagram of a method of forming a protective film of a semiconductor device for performing the semiconductor device protective film inspection method according to a second embodiment of the present invention.
[3] 3 is a graph showing the mutual transition ratio of polyamic acid (polyamic acid) and polyimide (polyimide) with temperature changes.
[15] In order to achieve the above object, the present invention comprises the steps of forming a polyimide film on a substrate, immersing the substrate on which the polyimide film is formed in liquid nitrogen to rapidly cool the polyimide film and cutting the substrate in a vertical direction. Steps.
[16] In this way, the cross section can be cut off smoothly by rapidly cooling the viscoelastic material.
[17] Hereinafter, the present invention will be described in detail.
[18] A polyimide film is formed on the substrate, and the substrate on which the polyimide film is formed is immersed in liquid nitrogen to rapidly cool the polyimide film. The substrate is cut in the vertical direction to prepare a specimen. Cracks are generated in the substrate before cutting the substrate.
[19] In this case, the substrate is a substrate on which a circuit is formed, and the polyimide film exposes a fuse and a pad portion.
[20] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
[21] Example 1
[22] 1 is a block diagram of a specimen manufacturing method according to a first embodiment of the present invention.
[23] Referring to FIG. 1, a highly viscous material film is formed on a substrate. (S100) Since the material has a very viscous viscosity in a sticky state, a film is not formed by a conventional coating method, thereby forming a film in a slime form.
[24] The substrate on which the film is formed is immersed in liquid nitrogen. When the material is immersed in liquid nitrogen as described above, the polymer material having a viscoelasticity capable of absorbing the impact from the outside is changed to a state in which intermolecular movement is impossible. Therefore, the substrate and the material formed on the substrate are rapidly and rapidly cooled. The immersion time may be advanced from a few seconds to a few minutes (S110).
[25] In order to prevent the liquid nitrogen from vaporizing, the liquid nitrogen may be immersed in a specific container, or may be used in a manner of flowing the liquid nitrogen onto the substrate to which the material is applied. In order to prevent waste of the liquid nitrogen, the substrate may be loaded and unloaded into a container disconnected from the outside.
[26] Cracks are generated in the substrate. (S120) Physically exert a force to expose the cross section vertically along the crack (S130). (S130) The highly viscous material due to the liquid nitrogen is rapidly cooled state Because it is easy to be broken. Therefore, when the force is physically applied to the cracked portion, the crack is formed and the stress starts at the point where the physical force is applied, so the crack progresses in the direction of the stress is cut.
[27] Therefore, a phenomenon that appears to be torn during cutting due to the viscosity does not occur in the cross section, and is cut cleanly to observe the shape of the clear cross section.
[28] As described above, the step of generating the crack may be selected according to the working environment such as before the material is applied to the substrate, after the material is applied and after rapid cooling. In addition, rapid cooling vessels may be selected depending on the size and environment of the specimen to be produced.
[29] Depending on the type of material, a film may be formed on the substrate and then cut, or additionally, only the material may be rapidly cooled and cut into liquid nitrogen without forming a film on the substrate.
[30] Example 2
[31] 2 is a block diagram of a method of forming a protective film of a semiconductor device for performing a semiconductor device protective film inspection method according to a preferred embodiment of the present invention, Figure 3 is a polyamic acid (polyamic acid) and polyimide of the temperature change It is a graph showing the mutual transition ratio.
[32] In the process of forming the protective film of the semiconductor device, the method of forming the specimen by taking the sample for analysis is the same as in Example 1, and thus the overlapping description will be omitted.
[33] Referring to FIG. 2, a polyimide film is formed on a substrate on which a circuit for manufacturing a semiconductor device is formed. (S200) Since the polyimide has a very high viscosity of 14000 cP or more at room temperature, a film is normally coated. It is not formed, forming a film in the form of mucus.
[34] Applying photoresist on the polyimide film to selectively open the circuit formed on the substrate, and then forming a photoresist pattern by a conventional photolithography process, by selectively etching the film using the photoresist An open area is formed. (S210) The open area includes a fuse part formed for repair of a cell and a pad part which is a part to which a signal is applied from the outside.
[35] The film in which the open region is formed as described above is dried in two steps according to the manufacturing process of the semiconductor device.
[36] The polyimide film is first dried at 120 ° C. (S220) A sample is prepared by selecting some of the first dried elements as a sample for primary analysis.
[37] Referring to FIG. 3, as the temperature increases, the rate of transition from polyamic acid to polyimide increases. Therefore, up to 350 ° C., the material itself remains sticky due to the presence of polyamic acid, whereas at 350 ° C. or higher, a complete transition to polyimide occurs. However, the polyimide is excellent in ductility by itself.
[38] Therefore, in order to rapidly cool the polyimide, some selected analytical samples are cut through the same process as in Example 1 to prepare a specimen.
[39] The vertical cross section of the specimen is confirmed by observing the cross section using an analytical device such as SEM. Observe whether the polyimide remains open at the bottom of the open area without remaining, and observe the profile of the open area (S240).
[40] Therefore, if the polyimide remains on the bottom surface of the open region of the polyimide film after the first drying and the profile is not satisfied, the entire polyimide film is removed (S245). By adjusting and optimizing (S247), the polyimide film can be formed on the substrate again.
[41] When the profile is satisfied, the polyimide film is secondarily dried at 350 ° C. or higher. (S250) A sample for analysis selected from some of the secondary dried devices is cut in the same manner as in Example 1 to prepare a specimen. (S260)
[42] By observing the cross section using an analytical device such as SEM, it is observed whether the open area of the membrane is fully opened to the lower part, and the profile of the open area is observed. (S270) If the profile does not satisfy the condition, defective treatment If the condition is satisfied (S275), the protective film of the semiconductor device is completed through post-production. (S280)
[43] As described above, according to the present invention, a polyimide film formed to protect a circuit fabricated on a semiconductor substrate is instantaneously rapidly cooled using liquid nitrogen and then cut to prepare a specimen.
[44] In this manner, the rapidly cooled polyimide film is cut by applying a physical force, so that the specimen can be produced without causing defects such as tearing in the cross section. Therefore, the bottom face of the open area which cannot be identified planarly can be observed in cross section.
[45] As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified without departing from the spirit and scope of the invention described in the claims below. And can be changed.

权利要求:
Claims (3)
[1" claim-type="Currently amended] Iii) forming a polyimide film on the substrate;
Ii) immersing the substrate on which the polyimide film is formed in liquid nitrogen to rapidly cool the polyimide film; And
And iii) cutting the substrate in a vertical direction.
[2" claim-type="Currently amended] The method of claim 1, further comprising generating a crack in the substrate.
[3" claim-type="Currently amended] The method of claim 1, wherein the semiconductor substrate is a substrate on which a circuit is formed, and the polyimide film exposes a fuse and a pad portion.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2002-09-03|Application filed by 삼성전자주식회사

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2002-09-03|Priority to KR1020020052883A

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2004-03-10|Publication of KR20040021278A

优先权:

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申请号 | 申请日 | 专利标题

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KR1020020052883A|KR20040021278A|2002-09-03|2002-09-03|Method of manufacturing semiconductor sample|